HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6816
Issued Date : 1993.08.26
Revised Date : 2002.10.25
Page No. : 1/3
HMBT5089
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT5089 is designed for low noise, high gain, general purpose
amplifier applications.
Absolute Maximum Ratings
SOT-23
•
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°C
Junction Temperature.................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 30 V
VCEO Collector to Emitter Voltage...................................................................................... 25 V
VEBO Emitter to Base Voltage........................................................................................... 4.5 V
IC Collector Current ......................................................................................................... 50 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
30
25
4.5
-
-
-
-
400
450
400
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
100
500
800
1200
-
-
-
4.0
Unit
V
V
V
nA
nA
mV
mV
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=15V
VEB=4.5V
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCE=5V, IC=0.1mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=0.5mA, f=20MHz
VCB=5V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
HMBT5089
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
