HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6815
Issued Date : 1993.06.30
Revised Date : 2002.10.25
Page No. : 1/4
HMBT4401
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT4401 is designed for general purpose switching and
amplifier applications.
Absolute Maximum Ratings
SOT-23
•
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°C
Junction Temperature.................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 60 V
VCEO Collector to Emitter Voltage...................................................................................... 40 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current........................................................................................................ 600 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
60
40
6
-
-
-
-
-
20
40
80
100
40
250
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
0.4
750
950
1.2
-
-
-
300
-
-
6.5
Unit
V
V
V
nA
V
mV
mV
V
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCE=35V, VBE=-0.4V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
VCE=10V, IC=20mA, f=100MHz
VCB=5V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
PF
HMBT4401
HSMC Product Specification