HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6834
Issued Date : 1998.02.01
Revised Date : 2001.10.25
Page No. : 1/3
HMBT2369
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT2369 is designed for general purpose switching and
amplifier applications.
Features
•
Low Collector Saturation Voltage
•
High speed switching Transistor
SOT-23
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 225 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 40 V
VCEO Collector to Emitter Voltage ...................................................................................... 15 V
VEBO Emitter to Base Voltage ........................................................................................... 4.5 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
fT
Cob
Min.
40
15
4.5
-
-
-
-
-
700
-
40
20
500
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
900
-
Max.
-
-
-
400
100
250
300
600
850
1.5
120
-
-
4
Unit
V
V
V
nA
nA
mV
mV
mV
mV
V
Test Conditions
IC=100uA, IE=0
IC=10mA, IB=0
IE=10uA, IC=0
VCB=20V, IE=0
VEB=2V, IC=0
IC=10mA, IB=1mA
IC=10mA, IB=0.3mA
IC=100mA, IB=10mA
IC=10mA, IB=1mA
IC=100mA, IB=1mA
IC=10mA, VCE=1V
IC=100mA, VCE=2V
IC=10mA, VCE=10V, f=100MHZ
VCB=5V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
HMBT2369
HSMC Product Specification