HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 2000.12.01
Revised Date : 2001.01.01
Page No. : 1/3
HM772A
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HM772A is designed for use in output stage of amplifier, voltage
regulator, DC-DC converter and driver.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ....................................................................................................... -55 ~ +150
°C
Junction Temperature ............................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ........................................................................................1 W
(Note1)
Total Power Dissipation (Ta=25°C)........................................................................................ 2 W
(Note2)
Total Power Dissipation (Ta=25°C)..................................................................................... 1.5 W
(Note3)
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage.................................................................................................... -60 V
VCEO Collector to Emitter Voltage................................................................................................. -50 V
VEBO Emitter to Base Voltage......................................................................................................... -5 V
IC Collector Current (continuous) ..................................................................................................... -3 A
IC Collector Current (pulse) ................................................................................................. -7 A
(Note4)
Note1: When tested in free air condition, without heat sinking.
Note2: When mounted on a 40X40X1mm ceramic board.
Note3: Printed circuit board 2mm thick, collector plating 1cm square or larger.
Note4: Single pulse PW=1ms
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
-60
-50
-5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-0.3
-1
-
160
80
55
Max.
-
-
-
-1
-1
-0.5
-2
-
500
-
-
Unit
V
V
V
uA
uA
V
V
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-30V
VEB=-3V
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
VCE=-5V, IC=-100mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
Classification Of hFE2
Rank
Range
Q
100-200
P
160-320
E
250-500
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
