HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9505-B
Issued Date : 1996.04.09
Revised Date : 2000.10.01
Page No. : 1/3
HM6718
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HM6718 is designed for general purpose medium power
amplifier and switching.
Features
•
High power: 1W
•
High current: 1A
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ...................................................................................... 1 W
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... 100 V
VCEO Collector to Emitter Voltage ................................................................................... 100 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current ............................................................................................................. 1 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
100
100
5
-
-
80
100
20
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
350
-
250
-
-
20
Unit
V
V
V
nA
mV
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=80V
IC=350mA, IB=35mA
VCE=1V, IC=50mA
VCE=1V, IC=250mA
VCE=1V, IC=500mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
HSMC Product Specification