HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9524-B
Issued Date : 1998.01.06
Revised Date : 2000.10.01
Page No. : 1/3
HM44
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HM44 is designed for application requires high voltage.
Features
•
High voltage: VCEO=400V(min) at IC=1mA
•
High current gain: IC=300mA at 25°C
•
Complementary with HM94
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ...................................................................................... 1 W
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... 400 V
VCEO Collector to Emitter Voltage ................................................................................... 400 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ...................................................................................................... 300 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
*hFE3
*hFE4
Cob
Min.
400
400
6
-
-
-
-
-
-
40
50
45
40
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
4
Max.
-
-
-
100
100
500
375
750
750
-
300
-
-
6
Unit
V
V
V
nA
nA
nA
mV
mV
mV
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=400V
VEB=4V
VCE=400V
IC=20mA, IB=2mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
VCB=20V, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
pF
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
