HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9506-B
Issued Date : 1996.04.09
Revised Date : 2000.10.01
Page No. : 1/3
HM3906
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HM3906 is designed for general purpose switching and
amplifier applications.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ...................................................................................... 1 W
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -40 V
VCEO Collector to Emitter Voltage .................................................................................... -40 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ..................................................................................................... -200 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
-40
-40
-5
-
-
-
-650
-
60
80
100
60
30
250
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-50
-250
-400
-850
-950
-
-
300
-
-
-
4.5
Unit
V
V
V
nA
mV
mV
mV
mV
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCE=-30V, VBE=-3V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-1V, IC=-100uA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-100mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-5V, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
