HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :HE9526-A
Issued Date : 1998.07.01
Revised Date : 2000.10.01
Page No. : 1/2
HM3019
NPN EPITAXIAL PLANAR TRANSISTOR
Description
This device is designed for use as general purpose amplifier and
switching requiring collector currents 1A
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................... 1.2 W
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... 140 V
VCEO Collector to Emitter Voltage ..................................................................................... 80 V
VEBO Emitter to Base Voltage ............................................................................................. 7 V
IC Collector Current .............................................................................................................. 1 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
140
80
7
-
-
-
-
50
90
100
50
15
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
0.2
1.1
-
-
300
-
-
-
12
Unit
V
V
V
nA
nA
V
V
Test Conditions
IC=100uA
IC=30mA
IE=100uA
VCB=90V
VEB=5V
IC=150mA, IB=15mA
IC=150mA, IB=15mA
IC=0.1mA, VCE=10V
IC=10mA, VCE=10V
IC=150mA, VCE=10V
IC=500mA, VCE=10V
IC=1000mA, VCE=10V
IC=50mA, VCE=10V, f=100MHz
VCE=10V, f=1MHz, IE=0
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
