HLB120S 参数 Datasheet PDF下载

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HA200204

Issued Date : 2002.02.01

Revised Date : 2005.02.05

Page No. : 1/4

HLB120S

NPN Triple Diffused Planar Type High Voltage Transistors

Description

The HLB120S is a medium power transistor designed for use in switching

applications.

TO-92

Features

•

High Breakdown Voltage

•

Low Collector Saturation Voltage

•

Fast Switching Speed

Absolute Maximum Ratings

•

Maximum Temperatures

Storage Temperature ........................................................................................................................... -55 ~ +150

°C

Junction Temperature ................................................................................................................... +150

°C

Maximum

•

Maximum Power Dissipation

Total Power Dissipation (T

A

=25°C) ............................................................................................................... 625 mW

Total Power Dissipation (T

C

=25°C) ...................................................................................................................... 7 W

•

Maximum Voltages and Currents (T

A

=25°C)

V

CBO

Collector to Base Voltage ......................................................................................................................... 500 V

V

CEO

Collector to Emitter Voltage ...................................................................................................................... 400 V

V

EBO

Emitter to Base Voltage ................................................................................................................................ 6 V

I

C

Collector Current (DC) ............................................................................................................................... 100 mA

I

C

Collector Current (Pulse)............................................................................................................................ 200 mA

I

B

Base Current (DC)........................................................................................................................................ 20 mA

I

B

Base Current (Pulse).................................................................................................................................... 40 mA

Electrical Characteristics

(T

A

=25°C)

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

CEO

I

EBO

*V

CE(sat)1

*V

CE(sat)2

*V

BE(sat)

*h

FE1

*h

FE2

Min.

500

400

6

-

-

-

-

-

-

8

10

Typ.

-

-

-

-

-

-

-

-

-

-

-

Max

-

-

-

10

10

10

400

750

1

-

36

Unit

V

V

V

uA

uA

uA

mV

mV

V

I

C

=100uA, I

E

=0

I

C

=10mA, I

B

=0

I

E

=10uA, I

C

=0

V

CB

=450V

V

CE

=400V, I

B

=0

V

EB

=6V, I

C

=0

I

C

=50mA, I

B

=10mA

I

C

=100mA, I

B

=20mA

I

C

=50mA, I

B

=10mA

V

CE

=10V, I

C

=10mA

V

CE

=10V, I

C

=50mA

*Pulse Test: Pulse Width

≤380us,

Duty Cycle≤2%

Test Conditions

HLB120S

HSMC Product Specification