HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6830-A
Issued Date : 1994.01.25
Revised Date : 2000.11.01
Page No. : 1/2
HJ667A
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HJ667A is designed for low frequency power amplifier.
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 20 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................... -120 V
BVCEO Collector to Emitter Voltage................................................................................ -100 V
BVEBO Emitter to Base Voltage .......................................................................................... -5 V
IC Collector Current ............................................................................................................. -1 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
-120
-100
-5
-
-
-
60
30
-
-
Typ.
-
-
-
-
-
-
-
-
140
12
Max.
-
-
-
-10
-1
-1.5
200
-
-
-
Unit
V
V
V
uA
V
V
Test Conditions
IC=-100uA
IC=-1mA
IC=-10uA
VCB=-100V
IC=-500mA, IB=-50mA
VCE=-5V,IC=-150mA
VCE=-5V,IC=-150mA
VCE=-5V,IC=-500mA
VCE=-5V, IC=-150mA
VCB=-10V, f=1MHz, IE=0
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
Classification Of hFE1
Rank
Range
B
60-120
C
100-200
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
