HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6018-B
Issued Date : 1996.04.15
Revised Date : 2000.11.01
Page No. : 1/3
HJ1609
NPN EPITAXIAL PLANAR TRANSISTOR
Description
•
Low frequency high voltage amplifier.
•
Complementary pair with HJ1109.
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ................................................................................. 1.25 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 160 V
BVCEO Collector to Emitter Voltage................................................................................. 160 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current (DC) .............................................................................................. 100 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
160
160
5
-
-
-
60
30
-
-
Typ.
-
-
-
-
-
-
-
-
140
3.8
Max.
-
-
-
10
2
1.5
320
-
-
-
Unit
V
V
V
uA
V
V
Test Conditions
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=140V, IE=0
IC=30mA, IB=3mA
VCE=5V, IC=10mA
VCE=5V, IC=10mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCB=10V, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
Classification Of hFE1
Rank
Range
B
60-120
C
100-200
D
160-320
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
