HI-SINCERITY
MICROELECTRONICS CORP.
ELectrical Characteristics
(T
j
=25°C, unless otherwise specified)
Symbol
V
(BR)DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
Characteristic
Drain-Source Breakdown Voltage (V
GS
=0V, I
D
=250uA)
Drain-Source Leakage Current (V
DS
=400V, V
GS
=0V)
Drain-Source Leakage Current (V
DS
=320V, V
GS
=0V, T
j
=125°C)
Gate-Source Leakage Current-Forward (V
gsf
=20V, V
DS
=0V)
Gate-Source Leakage Current-Reverse (V
gsr
=-20V, V
DS
=0V)
Gate Threshold Voltage (V
DS
=V
GS
, I
D
=250uA)
Static Drain-Source On-Resistance (V
GS
=10V, I
D
=3.3A)(*4)
Forward Transconductance (V
DS
=50V, I
D
=3.3A)(*4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(V
DS
=320V, I
D
=3.5A, V
GS
=10V)
(*4)
(V
DD
=200V, I
D
=3.5A, R
G
=12Ω,
R
D
=57Ω)(*4)
V
DS
=25V, V
GS
=0V, f=1MHz
-
-
2
-
Spec. No. : MOS200406
Issued Date : 2004.10.01
Revised Date : 2005.04.22
Page No. : 2/4
Min.
400
-
Typ.
-
-
-
-
-
-
-
700
170
64
10
15
38
14
-
-
-
4.5
7.5
Max.
-
1
50
100
-100
4
1
-
-
-
-
-
-
-
-
38
5.7
22
-
-
Unit
V
uA
uA
nA
nA
V
Ω
S
pF
2.9
-
-
-
-
-
-
-
-
-
-
-
-
ns
nC
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
Internal Source Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
nH
nH
*4: Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
Source-Drain Diode
Symbol
Q
rr
t
on
t
rr
V
SD
Reverse Recovery Charge
Forward Turn-On Time
Reverse Recovery Time
Diode Forward Voltage
I
S
=5.5A, V
GS
=0V, T
j
=25°C (*4)
I
F
=3.5A, d
i
/d
t
=100A/us, T
j
=25°C
(*4)
Characteristic
Min.
-
-
-
-
Typ.
1.8
**
270
-
Max. Units
2.2
-
530
1.6
ns
V
uC
**: Negligible, Dominated by circuit inductance
HIRF730, HIRF730F
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
