HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9017-B
Issued Date : 1996.04.12
Revised Date : 2000.11.01
Page No. : 1/3
HI127
PNP EPITAXIAL PLANAR TRANSISTOR
Description
•
High DC current gain
•
Bult-in a damper diode at E-C
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 20W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................... -100 V
BVCEO Collector to Emitter Voltage................................................................................ -100 V
BVEBO Emitter to Base Voltage .......................................................................................... -5 V
IC Collector Current ............................................................................................................. -8 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
Min.
-100
-100
-5
-
-
-
-
-
-
-
1
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-10
-2
-10
-2
-4
-4.5
-2.8
12
-
300
Unit
V
V
V
uA
mA
uA
V
V
V
V
K
pF
Test Conditions
IC=-1mA, IE=0
IC=-30mA, IB=0
IE=-1mA, IC=0
VCB=-100V, IE=0
VEB=-5V, IC=0
VCE=-100V, VBE(off)=-1.5V
IC=-4A, IB=-16mA
IC=-8A, IB=-80mA
IC=-8A, IB=-80mA
VCE=-4V, IC=-4A
VCE=-4V, IC=-4A
VCE=-4V, IC=-8A
VCB=-10V, f=0.1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
