HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9033
Issued Date : 1998.07.01
Revised Date : 2002.01.11
Page No. : 1/4
HI112
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI112 is designed for use in general purpose amplifier and low-
speed switching applications.
Absolute Maximum Ratings
(Ta=25°C)
TO-251
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ...................................................................................... 150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ..................................................................................... 25 W
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... 100 V
VCEO Collector to Emitter Voltage .................................................................................... 100 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current .............................................................................................................. 4 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(on)
*VBE(sat)
*hFE1
*hFE2
*hFE3
Cob
Min.
100
100
-
-
-
-
-
-
-
500
1
200
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
10
20
2
2
3
2.8
4
-
12
-
100
Unit
V
V
uA
uA
mA
V
V
V
V
K
pF
Test Conditions
IC=1mA
IC=30mA
VCB=80V
VCE=50V
VEB=5V
IC=2A, IB=8mA
IC=4A, IB=40mA
IC=2A, VCE=4V
IC=4A, IB=80mA
IC=0.5A, VCE=3V
IC=2A, VCE=3V
IC=4A, VCE=3V
VCB=10V
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HI112
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
