HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9028
Issued Date : 1994.01.25
Revised Date : 2001.12.19
Page No. : 1/3
HI10387
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI10387 is designed for general-purpose amplifier and low-
speed switching applications.
Absolute Maximum Ratings
(Ta=25°C)
TO-251
•
Maximum Temperatures
Storage Temperature .............................................................................................. -55~+150
°C
Junction Temperature ....................................................................................... 150°C Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 65 W
Total Power Dissipation (Ta=25°C) ....................................................................................... 2 W
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 80 V
VCEO Collector to Emitter Voltage ...................................................................................... 80 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current ............................................................................................................ 10 A
Characteristics
(Ta=25°C)
Symbol
BVCEO
ICBO
IEBO
ICEO
ICEV
VCE(sat)1
VCE(sat)2
VCE(sat)3
VBE(sat)
VBE(on)1
VBE(on)2
VFEC
hFE1
hFE2
Min.
80
-
-
-
-
-
-
-
-
-
-
-
2
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
100
2
1
300
2
3
1.5
2
2.8
4.5
3
20
-
Unit
V
uA
mA
mA
uA
V
V
V
V
V
V
V
K
Test Conditions
IC=200mA
VCB=160V
VEB=5V
VCE=80V
VCE=80V, VBE(Off)=1.5V
IC=5A, IB=10mA
IC=10A, IB=100mA
IC=5A, IB=2.5mA
IC=5A, IB=5mA
VCE=3V, IC=5A
VCE=3V, IC=10A
IC=5A
IC=5A, VCE=3V
VCE=3V, IC=10A
Classification Of VCE(sat)1
Rank
VCE(sat)1
KA
<1.5, BVCEO>130V
KB
<1.1V
KC
<1.3V
NORMAL
<2V
HI10387
HSMC Product Specification