HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6103
Issued Date : 1992.09.09
Revised Date : 2002.02.18
Page No. : 1/4
HE9012
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HE9012 is designed for use in 1W output amplifier of portable radios in
class B push-pull operation.
Features
•
High total power dissipation (PT: 625mW)
•
High collector current (IC: 500mA)
•
Complementary to HE9013
•
Excellent linearity
TO-92
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................................ +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................. 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage.................................................................................................... -40 V
VCEO Collector to Emitter Voltage ................................................................................................ -20 V
VEBO Emitter to Base Voltage......................................................................................................... -5 V
IC Collector Current .................................................................................................................. -500 mA
IBP Base Current...................................................................................................................... -100 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE1
*hFE2
Cob
fT
Min.
-40
-20
-5
-
-
-
-
-
112
40
-
100
Typ.
-
-
-
-
-
-
-
-
180
-
-
-
Max.
-
-
-
-100
-100
-0.6
-1.2
-0.9
300
-
8
-
Unit
V
V
V
nA
nA
V
V
V
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-100uA, IC=0
VCE=-25V, IE=0
VEB=-3V, IC=0
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-500mA
VCB=-10V, f=1MHz
VCE=-1V, IC=-10mA, f=100MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
pF
MHz
Classification on hFE1
Rank
Range
HE9012
G
112-166
H
144-202
I1
176-246
I2
214-300
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
