HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6403-B
Issued Date : 1993.03.18
Revised Date : 2000.09.20
Page No. : 1/3
HBF423
PNP EPITAXIAL PLANAR TRANSISTOR
Description
Video B-class Power stages in TV-receivers
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 830 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ..................................................................................... -250 V
VCEO Collector to Emitter Voltage .................................................................................. -250 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ....................................................................................................... -50 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Min.
-250
-250
-5
-
-
-
50
60
Typ.
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-10
-0.6
-
-
Unit
V
V
V
nA
uA
V
MHz
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-200V, IE=0
VEB=-5V, IE=0
IC=-30mA, IB=-3mA
VCE=-20V, IC=-25mA
IE=-10mA, VCE=-10V, f=100MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
