HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6404
Issued Date : 1993.03.18
Revised Date : 2002.04.18
Page No. : 1/3
HBF422
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Video B-class Power stages in TV-receivers
Absolute Maximum Ratings
TO-92
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 830 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... 250 V
VCEO Collector to Emitter Voltage .................................................................................... 250 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current ......................................................................................................... 50 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Min.
250
250
5
-
-
-
50
60
Typ.
-
-
-
-
-
-
-
-
Max.
-
-
-
100
10
0.6
-
-
Unit
V
V
V
nA
uA
V
MHz
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=200V
VEB=5V
IC=30mA, IB=3mA
VCE=20V, IC=25mA
IE=10mA, VCE=10V, f=100MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HBF422
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
