HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 2001.08.01
Revised Date : 2001.08.24
Page No. : 1/3
HBD139
NPN POWER TRANSISTORS
Description
PNP power transistor in a TO-126 plastic package. NPN complements:
HBD140
Features
•
High Current (max. 1.5A)
•
Low Voltage (max. 80V)
Applications
Driver stages in hi-fi amplifiers and television circuits.
Limiting Values
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
Tstg
Tj
Tamb
Parametor
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current
Peak Base Current
Total Dissipation at
Storage Temperature
Junction Temperature
Operating Ambient Temperature
Conditions
Open Emitter
Open Base
Open Collector
Min.
-
-
-
-
-
-
-
-
-65
-
-65
Max.
100
80
5
1.5
2
1
1.2
15
150
150
150
Unit
V
V
V
A
A
A
W
W
°C
°C
°C
Ta=25°C
Tc=25°C
-
-
-
Electrical Characteristics
(Tj=25°C, unless otherwise specified)
Symbol
ICBO
IEBO
*VCE(sat)
*VBE
hFE
fT
*hFE1/hFE2
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Transition Frequency
DC current gain ratio of
the complementary pairs
Conditions
IE=0, VCB=30V
IC=0, VEB=5V
IC=500mA, IB=50mA
IC=500mA, VCE=2V
VCE=2V, IC=5mA
VCE=2V, IC=150mA
VCE=2V, IC=500mA,
IC=50mA, VCE=5V, f=100MHz
|IC|=150mA, |VCE|=2V
Min.
-
-
-
-
40
63
25
-
-
Typ. Max.
-
100
-
100
-
-
-
-
-
240
0.9
0.5
1
-
250
-
-
1.6
Unit
nA
nA
V
V
-
-
-
MHz
-
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
HBD139
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
