HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6423-B
Issued Date : 1992.11.25
Revised Date : 2000.09.20
Page No. : 1/3
HBC557
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HBC557 is designed for use in driver stage of audio amplifier
applications.
Features
•
High Breakdown Voltage: 45V
•
High AC Current Gain: 75-800 at IC=2mA
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 500 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -50 V
VCEO Collector to Emitter Voltage .................................................................................... -45 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ..................................................................................................... -100 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VBE(on)1
VBE(on)2
*VCE(sat)1
*VCE(sat)2
*hFE
fT
Cob
Min.
-50
-45
-5
-
-
-600
-
-
-
75
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
300
4.5
Max.
-
-
-
-100
-1
-750
-820
-300
-650
800
-
-
Unit
V
V
V
nA
uA
mV
mV
mV
mV
MHz
PF
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-20V
VEB=-5V
IC=-2mA, VCE=-5V
IC=-10mA, VCE=-5V
IC=-10mA, IB=-1mA
IC=-100mA, IB=-10mA
VCB=-5V, IC=-2mA
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
Classification of hFE
Rank
Range
A
125-260
B
240-500
C
420-800
Normal
75-260
HSMC Product Specification