HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6422
Issued Date : 1992.11.25
Revised Date : 2001.06.15
Page No. : 1/3
HBC556
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HBC556 is primarily intended for use in driver stage of audio
amplifiers.
Features
•
High Breakdown Voltage: 65V at IC=1mA
•
High AC Current Gain: 75-500 at IC=2mA,VCE=5V,f=1MHz
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 500 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -80 V
VCEO Collector to Emitter Voltage .................................................................................... -65 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ..................................................................................................... -100 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
VBE(on)1
VBE(on)2
*VCE(sat)1
*VCE(sat)2
*hFE
fT
Cob
Min.
-80
-65
-5
-
-600
-
-
-
75
-
-
Typ.
-
-
-
-
-
-
-
-
-
300
4.5
Max.
-
-
-
-15
-750
-820
-300
-650
475
-
-
Unit
V
V
V
nA
mV
mV
mV
mV
MHZ
Pf
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-30V, IE=0
IC=-2mA, VCE=-5V
IC=-10mA, VCE=-5V
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
VCE=-5V, IC=-2mA,
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
Classification of hFE
Rank
Range
A
125-250
B
220-475
Normal
75-475
HBC556
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
