HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200217
Issued Date : 2002.09.01
Revised Date : 2005.02.04
Page No. : 1/4
HBC517
NPN EPITAXIAL PLANAR TRANSISTOR
Description
General Purpose High Darlington Transistor
Absolute Maximum Ratings
TO-92
•
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
°C
Junction Temperature ................................................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ............................................................................................................... 625 mW
•
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage ........................................................................................................................... 40 V
V
CEO
Collector to Emitter Voltage ........................................................................................................................ 30 V
V
EBO
Emitter to Base Voltage .............................................................................................................................. 10 V
I
C
Collector Current ........................................................................................................................................ 500 mA
Electrical Characteristics
(T
A
=25°C)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
hFE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Test Condition
I
C
=0.1mA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=10V, I
C
=0
I
C
=100mA, V
CE
=2V
I
C
=100mA, I
B
=1mA
I
C
=100mA, I
B
=1mA
I
C
=100mA, V
CE
=2V,
f=100MHz
V
CB
=10V, f=1MHz, I
E
=0
Min.
40
30
10
-
-
30K
-
-
-
-
Typ.
-
-
-
-
-
-
-
1.5
220
5
Max.
-
-
-
1
1
-
1
2
-
-
V
V
MHz
pF
Unit
V
V
V
uA
uA
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HBC517
HSMC Product Specification