HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6413
Issued Date : 1993.01.15
Revised Date : 2002.02.05
Page No. : 1/4
HBC327
PNP EPITAXIAL PLANAR TRANSISTOR
Description
This HBC327 is designed for driver and output-stages of audio
amplifiers.
Features
•
High DC Current Gain: 100-600 at IC=100mA,VCE=1V
•
Complementary to HBC337
TO-92
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -50 V
VCEO Collector to Emitter Voltage ..................................................................................... -45 V
VEBO Emitter to Base Voltage ............................................................................................. -5 V
IC Collector Current ...................................................................................................... -500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*hFE1
*hFE2
*VCE(sat)1
VBE(on)
fT
Cob
Min.
-50
-45
-5
-
-
100
40
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
100
4
Max.
-
-
-
-100
-100
600
-
-0.7
-1.2
-
-
Unit
V
V
V
nA
nA
Test Conditions
IC=-100uA, IE=0
IC=-10mA, IB=0
IE=-100uA, IC=0
VCB=-30V, IE=0
VEB=-5V, IC=0
VCE=-1V, IC=-100Ma
VCE=-1V, IC=-300mA
IC=-500mA, IB=-50mA
VCE=-1V, IC=-300mA,
VCE=-5V, IC=-10mA, f=100MHZ
VCB=-10V, f=1MHZ, IC=0
V
V
MHZ
PF
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification of hFE1
Rank
Range
16
100-250
25
160-400
40
250-600
HBC327
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
