HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6446-B
Issued Date : 1992.11.25
Revised Date : 2000.09.20
Page No. : 1/4
HBC237
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HBC237 is primarily intended for in driver stage of audio
amplifiers.
Features
High Breakdown Voltage: 45V at IC=2mA
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 400 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCES Collector to Emitter Voltage...................................................................................... 50 V
VCEO Collector to Emitter Voltage ..................................................................................... 45 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current ...................................................................................................... 100 mA
Characteristics
(Ta=25°C,
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
)
Symbol
BVCES
BVCEO
BVEBO
ICES
IEBO
VBE(on)
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
50
45
6
-
-
550
-
-
-
-
50
120
60
150
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
15
100
700
200
600
1.05
830
-
800
-
-
4.5
Unit
V
V
V
nA
nA
mV
mV
mV
V
mV
Test Conditions
IC=100uA, VEB=0
IC=2mA, IB=0
IE=100uA, IC=0
VCB=50V, IE=0
VEB=4V, IC=0
IC=2mA, VCE=5V
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
VCE=5V, IC=10uA
VCE=5V, IC=2mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
MHz
PF
Classification of hFE2
Rank
Range
A
120-220
B
180-460
C
300-800
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
