HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6854
Issued Date : 1997.04.28
Revised Date : 2002.10.24
Page No. : 1/3
HBAT54\A\C\S
Description
Silicon Schottky Barrier Double Diodes
Features
These diodes feature very low turn-on voltage and fast switching.
There is a PN junction guard ring against excessive voltage such as
electronics attic discharges protects these devices.
SOT-23
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature .............................................................................................. -65~+125
°C
Junction Temperature .................................................................................................... +125
°C
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 230 mW
•
Maximum Voltages and Currents (Ta=25°C)
Repetitive Peak Reverse Voltage ........................................................................................ 30 V
Forward Continuous Current .......................................................................................... 200 mA
Repetitive Peak Forward Current .................................................................................. 300 mA
Surge Forward Current (tp<1s)....................................................................................... 600 mA
Characteristics
(Ta=25°C)
Characteristic
Reverse breakdown Voltage
Symbol
V(BR)R
VF(1)
VF(2)
VF(3)
VF(4)
VF(5)
IR
CT
Trr
Condition
IR=10uA
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
VR=25V
VR=1V, f=1MHz
IF=IR=10mA RL=100Ω
measured at IR=1mA
Min.
30
-
-
-
-
-
-
-
-
Max.
-
240
320
400
500
1000
2.0
10
5
Unit
V
mV
mV
mV
mV
mV
uA
pF
nS
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
HBAT54, HBAT54A, HBAT54C, HBAT54S
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
