HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6854
Issued Date : 1997.04.28
Revised Date : 2004.08.26
Page No. : 1/4
HBAT54 Series
Description
Silicon Schottky Barrier Double Diodes
•
HBAT54: Single Diode, also available as double diodes.
•
HBAT54A: Common Anode.
•
HBAT54C: Common Cathode.
•
HBAT54S: Series Connected.
Diagram:
3
3
SOT-23
1
2
1
2
HBAT54
3
HBAT54A
3
Features
These diodes feature very low turn-on voltage and fast switching. There is a PN
junction guard ring against excessive voltage such as electronics attic discharges
protects these devices.
1
2
1
2
HBAT54C
HBAT54S
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................................................. -65~+125
°C
Junction Temperature .................................................................................................................................... +125
°C
•
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ............................................................................................................... 230 mW
•
Maximum Voltages and Currents (T
A
=25°C)
Repetitive Peak Reverse Voltage ....................................................................................................................... 30 V
Forward Continuous Current ......................................................................................................................... 200 mA
Repetitive Peak Forward Current ................................................................................................................. 300 mA
Surge Forward Current (tp<1s)...................................................................................................................... 600 mA
Electrical Characteristics
(T
A
=25°C)
Characteristic
Reverse breakdown Voltage
Symbol
V
(BR)
V
F(1)
V
F(2)
Forward Voltage
V
F(3)
V
F(4)
V
F(5)
Reverse Current
Total Capacitance
Reverse Recovery Time
I
R
C
T
T
rr
I
R
=10uA
I
F
=0.1mA
I
F
=1mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
V
R
=25V
V
R
=1V, f=1MHz
I
F
=I
R
=10mA, R
L
=100Ω,
measured at I
R
=1mA
Condition
Min.
30
-
-
-
-
-
-
-
-
Max.
-
240
320
400
500
1000
2.0
10
5
Unit
V
mV
mV
mV
mV
mV
uA
pF
nS
HBAT54, HBAT54A, HBAT54C, HBAT54S
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
