HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6411-B
Issued Date : 199.03.06
Revised Date : 2000.09.01
Page No. : 1/3
HAD826
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HAD826 is designed for general purpose amplifier and high
speed, medium-power switching applications.
Features
•
Low Collector Saturation Voltage
•
High Speed Switching
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature .......................................................................................... -55 ~ +150
°C
Junction Temperature..................................................................................... 150
°C
Maximum
•
Maximum Power Dissipations
Total Power Dissipation (Ta=25°C) .............................................................................. 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 75 V
VCEO Collector to Emitter Voltage..................................................................................... 60 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ....................................................................................................... 600mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
*hFE6
fT
Cob
Min.
75
60
6
-
-
-
-
-
-
-
35
50
75
100
40
50
300
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
50
300
1
1.2
2
-
-
-
300
-
-
-
8
Unit
V
V
V
nA
nA
nA
mV
V
V
V
Test Conditions
IC=10uA, IE=0
IC=10mA, IB=0
IE=10uA, IC=0
VCB=60V, IE=0
VCB=60V, VEB(OFF)=3V
VEB=3V, IC=0
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=1V, IC=150mA
IC=20mA, VCE=20V, f=100MHz
VCB=10V, F=1MHz
MHz
pF
HSMC Product Specification