HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :Preliminary Data
Issued Date : 2000.10.01
Revised Date : 2001.05.01
Page No. : 1/2
HAD825SP
NPN EPITAXIAL PLANAR TRANSISTOR
Features
Darlington Transistor
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature .......................................................................................... -55 ~ +150
°C
Junction Temperature................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) .............................................................................. 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 80 V
VCES Collector to Emitter Voltage ..................................................................................... 55 V
VEBO Emitter to Base Voltage ........................................................................................... 12 V
IC Collector Current ...................................................................................................... 600 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
ICES
*VCE(sat)1
*VCE(sat)2
*VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
80
55
12
-
-
-
-
-
-
10K
10K
125
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
500
1.2
1.5
1.5
-
100K
-
8
Unit
V
V
V
nA
nA
nA
V
V
V
Test Conditions
IC=100uA, IE=0
IC=100uA, IB=0
IE=10uA, IC=0
VCB=60V, IE=0
VEB=10V, IC=0
VCE=50V, IB=0
IC=10mA, IB=0.01mA
IC=100mA, IB=0.1mA
IC=100mA, VCE=5V
IC=10mA, VCE=5V
IC=100mA, VCE=5V
VCE=5V, IC=10mA, f =100MHz
VCB=10V, f=1MHz
MHz
pF
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
HAD825SP
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
