HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6406
Issued Date : 1994.01.13
Revised Date : 2002.03.06
Page No. : 1/3
HAD825
NPN EPITAXIAL PLANAR TRANSISTOR
Features
Darlington transistor.
Absolute Maximum Ratings
TO-92
•
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°C
Junction Temperature.................................................................................... +150
°C
Maximum
•
Maximum Power Dissipations
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 80 V
VCES Collector to Emitter Voltage ...................................................................................... 55 V
VEBO Emitter to Base Voltage............................................................................................ 12 V
IC Collector Current........................................................................................................ 600mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
ICES
*VCE(sat)
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
80
55
12
-
-
-
-
-
-
10K
10K
125
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
500
1.2
1.5
1.5
-
100K
-
8
Unit
V
V
V
nA
nA
nA
V
V
V
Test Conditions
IC=100uA
IC=100uA
IE=10uA
VCB=60V
VEB=10V
VCE=60V
IC=10mA, IB=0.01mA
IC=100mA, IB=0.1mA
IC=100mA, VCE=5V
IC=10mA, VCE=5V
IC=100mA, VCE=5V
IC=10mA, VCE=5V f=100MHz
VCB=10V, f=1MHz
MHz
pF
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HAD825
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
