HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6108
Issued Date : 1997.09.05
Revised Date : 2001.08.13
Page No. : 1/3
HA8550
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HA8550 is designed for use in 2W output amplifier of portable radios in
class B push-pull operation.
Features
•
High total power dissipation (PT: 2W, TC=25°C)
•
High collector current (IC: 1.5A)
•
Complementary to HA8050
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ....................................................................................................... -55 ~ +150
°C
Junction Temperature................................................................................................ +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................................... 1 W
Total Power Dissipation (Tc=25°C) ................................................................................................... 2 W
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage.................................................................................................... -40 V
VCEO Collector to Emitter Voltage................................................................................................. -25 V
VEBO Emitter to Base Voltage......................................................................................................... -6 V
IC Collector Current ..................................................................................................................... -1.5 A
IB Base Current ............................................................................................................................ -0.5 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE1
*hFE2
*hFE3
fT
Min.
-40
-25
-6
-
-
-
-
-
45
85
40
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-0.5
-1.2
-1
-
500
-
-
Unit
V
V
V
nA
nA
V
V
V
Test Conditions
IC=-100uA
IC=-2mA
IE=-100uA
VCB=-35V
VEB=-6V
IC=-0.8A, IB=-80mA
IC=-0.8A, IB=-80mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-5mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
VCE=-10V, IC=-50mA, f=100MHZ
MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
Classification on hFE2
Rank
Range
HA8550
C
120-200
D
160-320
E
250-500
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
