HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6109
Issued Date : 1997.09.05
Revised Date : 2001.04.27
Page No. : 1/4
HA8550S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HA8550S is designed for general purpose amplifier
applications.
Features
•
High DC Current Gain (hFE=100~500 at IC=150mA)
•
Complementary to HA8050S
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -25 V
VCEO Collector to Emitter Voltage ..................................................................................... -20 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ...................................................................................................... -700 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
FT
Cob
Min.
-25
-20
-5
-
-
-
100
-
150
-
Typ.
-
-
-
-
-
-
-
170
-
-
Max.
-
-
-
-1
-0.5
-1
500
-
-
10
Unit
V
V
V
uA
V
V
Test Conditions
IC=-10uA
IC=-1mA
IE=-10uA
VCB=-20V
IC=-0.5A, IB=-50mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-500mA
VCE=-10V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
MHz
pF
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
Classification on hFE
Rank
hFE1
C
100~200
D
150~300
E
250-500
HA8550S
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
