HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200610
Issued Date : 2006.06.01
Revised Date : 2006.06.28
Page No. : 1/4
H6968CTS
Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A)
(Battery Switch, ESD Protected)
8
7
6
5
8-Lead Plastic
TSSOP-8
Package Code: TS
H6968CTS Symbol & Pin Assignment
Pin 1: Drain
Pin 2 / 3: Source 1
Pin 4: Gate 1
Pin 5: Gate 2
Pin 6 / 7: Source 2
Pin 8: Drain
Features
•
R
DS(on)
<32mΩ@V
GS
=2.5V, I
D
=5.5A
•
R
DS(on)
<24mΩ@V
GS
=4.5V, I
D
=6.5A
•
Advanced Trench Process Technology
•
High Density Cell Design for Ultra Low On-Resistance
•
Specially Designed for Li ion Battery Packs Use
•
Designed for Battery Switch Appliactions
•
ESD Protected
Q2
Q1
1
2
3
4
Absolute Maximum Ratings
(T =25 C, unless otherwise noted)
o
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
j
, T
stg
R
θJA
ESD
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed)
*1
Parameter
Ratings
20
±12
6.5
30
1.5
0.96
-55 to +150
83
2000
Units
V
V
A
A
W
W
°C
°C/W
V
Total Power Dissipation @T
A
=25
o
C
Total Power Dissipation @T
A
=75
o
C
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)
*2
ESD Protect on Gate and Source
*1: Maximum DC current limited by the package under the ambient condition at room temperature.
*2: 1-in
2
2oz Cu PCB board
H6968CTS
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
