HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200510
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 1/4
H6968S / H6968CS
Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A)
(Battery Switch, ESD Protected)
•
8-Lead Plastic
SO-8
Package Code: S
Features
•
R
DS(on)
=32mΩ@V
GS
=2.5V, I
D
=5.5A
•
R
DS(on)
=24mΩ@V
GS
=4.5V, I
D
=6.5A
•
Advanced Trench Process Technology
•
High Density Cell Design for Ultra Low On-Resistance
•
Specially Designed for Li ion Battery Packs Use
•
Designed for Battery Switch Appliactions
•
ESD Protected
Absolute Maximum Ratings
(T =25 C, unless otherwise noted)
o
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
j
, T
stg
R
θJA
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed)
*1
Parameter
Ratings
20
±12
6.5
30
2
1.3
-55 to +150
62.5
Units
V
V
A
A
W
W
°C
°C/W
Total Power Dissipation @T
A
=25
o
C
Total Power Dissipation @T
A
=75
o
C
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)
*2
*1: Maximum DC current limited by the package
*2: 1-in
2
2oz Cu PCB board
Pin Assignment & Internal Schematic Diagram
Part No.
Pin Assignment
Internal Schematic Diagram
D1
D2
G2
H6968S
S2
G2
S1
G1
1
2
3
4
Top View
8
7
6
5
D2
D2
D1
D1
G1
S1
D
S2
D
G2
H6968CS
S2
G2
S1
G1
1
2
3
4
Top View
8
7
6
5
D
D
D
D
G1
S1
S2
H6968S, H6968CS
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
