HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Fig.1 Output Characteristic
80
V
GS
=5.0V,6.0V,10.0V
4.5V
60
V
DS
=10V
Spec. No. : MOS200517
Issued Date : 2005.12.01
Revised Date : 2005.12.16
Page No. : 3/5
Fig.2 Transfer Characteristic
I
D,
Drain-to-Source Current (A)
60
I
D
, Drain Source Current (A)
40
4.0V
40
25 C
20
T
J
=125 C
-55 C
0
o
o
o
3.5V
20
3.0V
0
0
1
2
3
4
5
2
2.5
3
3.5
4
4.5
5
V
DS,
Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Fig.3 On Resistance & Drain Current
60
55
80
Fig.4 On Resistance & Gate to Source Voltage
I
D
=20A
70
R
DS(ON)
- On-Resistance (mohm)
50
45
40
35
30
25
20
15
10
0
20
40
60
80
V
GS
=10.0V
V
GS
=4.5V
R
DS(ON),
On-Resistance (mohm)
60
50
40
30
20
10
0
2
4
6
8
10
T
J
=25 C
o
125 C
o
I
D
- Drain Current (A)
V
GS,
Gate-to-Source Voltage (V)
Fig.5 On Resistance & Junction Temperature
1.6
3000
V
GS
=10V
I
D
=30A
1.4
Ciss
Fig.6 Capacitance
f=1MHz
V
GS
=0V
R
DS(ON)
, On-Resistance (Normalized)
.
…
R
DS(ON)
, On-Resistance (mohm)
2500
2000
1.2
1500
1
1000
0.8
500
Coss, Crss
0.6
-50
-25
0
25
50
75
o
0
100
125
150
0
5
10
15
20
25
T
J
, Junction Temperature ( C)
V
DS
, Drain-to-Source Voltage (V)
H40N03E
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
