HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6823
Issued Date : 1994.01.25
Revised Date : 2002.10.24
Page No. : 1/4
H2N7002
N-CHANNEL TRANSISTOR
Description
N-channel enhancement-mode MOS transistor.
SOT-23
Absolute Maximum Ratings
Drain-Source Voltage............................................................................................................. 60 V
Drain-Gate Voltage (RGS=1MΩ) ........................................................................................... 60 V
Gate-Source Voltage ........................................................................................................ +/-40 V
Continuous Drain Current (Ta=25°C)(1) ........................................................................... 200 mA
Continuous Drain Current (Ta=100°C)(1) ......................................................................... 115 mA
Pulsed Drain Current (Ta=25°C)(2)................................................................................... 800 mA
Total Power Dissipation (Tc=25°C) .................................................................................. 200 mW
Derate above 25°C ................................................................................................... 0.16 Mw /
°C
Storage Temperature ............................................................................................... -55 to 150
°C
Operating Junction Temperature ............................................................................. -55 to 150
°C
Lead Temperature, for 10 second Soldering...................................................................... 260
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient ................................................................... 625
°C
/ W
Characteristics
(Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Source Leakage Current, Forward
Gate Source leakage Current, Reverse
Zero Gate Voltage Drain Current
On-State Drain Current
Static Drain-Source On-State Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
BV
DSS
V
GS(th)
I
GSS/F
I
GSS/R
I
DSS
I
D(ON)
Test Conditions
Min
60
1
-
-
-
500
-
-
-
-
80
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
2.5
100
100
1
-
0.375
3.75
7.5
7.5
-
50
25
5
Unit
V
V
nA
nA
uA
mA
V
V
Ω
Ω
mS
pF
pF
pF
V
GS
=0, I
D
=10uA
V
DS
=2.5V, I
D
=0.25mA
V
GS
=+20V, V
DS
=0
V
GS
=-20V, V
DS
=0
V
DS
=60V, V
GS
=0
V
DS
>2V
DS(ON)
, V
GS
=10V
I
D
=50mA, V
GS
=5V
V
DS(ON)
I
D
=500mA, V
GS
=10V
I
D
=50mA, V
GS
=5V
R
DS(ON)
I
D
=500mA, V
GS
=10V
G
FS
V
DS
>2V
DS(ON)
, I
D
=200mA
C
iss
C
oss
V
DS
=25V, V
GS
=0, f=1MHz
C
rss
(1)The Power Dissipation of the package may result in a continuous drain current.
(2)Pulse Width≤300us, Duty cycle≥2%.
H2N7002
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
