HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6274-B
Issued Date : 1994.11.18
Revised Date : 2000.09.28
Page No. : 1/3
H2N6520
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6520 is designed for general purpose applications requiring high
breakdown voltages.
Features
•
High Collector-Emitter Breakdown Voltage
•
Low Collector-Emitter Saturation Voltage
•
The H2N6520 is complementary to H2N6517
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ....................................................................................................... -55 ~ +150
°C
Junction Temperature ............................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................ 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage.................................................................................................. -350 V
VCEO Collector to Emitter Voltage............................................................................................... -350 V
VEBO Emitter to Base Voltage......................................................................................................... -5 V
IC Collector Current ................................................................................................................. -500 mA
IB Base Current ....................................................................................................................... -250 mA
Characteristics
(Ta=25°C,
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
VBE(on)
*VBE(sat)1
*VBE(sat)2
*VBE(sat)3
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
-350
-350
-5
-
-
-
-
-
-
-
-
-
-
20
30
30
20
15
40
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-50
-50
-0.30
-0.35
-0.50
-1
2
-0.75
-0.85
-0.90
-
-
200
200
-
200
6
Unit
V
V
V
nA
nA
V
V
V
V
V
V
V
V
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-250V, IE=0
VEB=-4V, IC=0
IC=-10mA, IB=-1mA
IC=-20mA, IB=-2mA
IC=-30mA, IB=-3mA
IC=-50mA, IB=-5mA
IC=-100mA, VCE=-10V
IC=-10mA, IB=-1mA
IC=-20mA, IB=-2mA
IC=-30mA, IB=-3mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-30mA
VCE=-10V, IC=-50mA
VCE=-10V, IC=-100mA
IC=-10mA, VCE=-20V, f=20MHz
VCB=-20V, f=1MHz, IE=0
HSMC Product Specification
MHz
pF
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
