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H2N5551 参数 Datasheet PDF下载

H2N5551图片预览
型号: H2N5551
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面晶体管 [NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 4 页 / 41 K
品牌: HSMC [ HI-SINCERITY MOCROELECTRONICS ]
 浏览型号H2N5551的Datasheet PDF文件第1页浏览型号H2N5551的Datasheet PDF文件第3页浏览型号H2N5551的Datasheet PDF文件第4页  
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
125 C
25 C
100
75 C
o
o
o
Spec. No. : HE6219
Issued Date : 1992.09.21
Revised Date : 2002.02.20
Page No. : 2/4
Saturation Voltage & Collector Current
100000
V
CE(sat)
@ I
C
=10I
B
Saturation Voltage (mV)
10000
hFE
1000
75 C
100
125 C
o
o
10
hFE @ V
CE
=5V
25 C
o
1
1
10
100
1000
10
0.1
1
10
100
1000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
1000
Capacitance & Reverse-Biased Voltage
100
25 C
o
Saturation Voltage (mV)
75 C
125 C
o
o
Capacitance (pF)
V
BE(sat)
@ I
C
=10I
B
10
Cob
100
0.1
1
10
100
1000
1
0.1
1
10
100
1000
Collector Current-I
C
(mA)
Reverse Biased Voltage (V)
Cutoff Frequency & Collector Current
1000
10000
Safe Operating Area
Cutoff Frequency (MHz)
..
.
1000
100
V
CE
=10V
Collector Current-I
C
(mA)
100
PT=1ms
PT=100ms
10
PT=1s
10
1
10
100
1
1
10
100
1000
Collector Current (mA)
Forward Biased Voltage-V
CE
(V)
H2N5551
HSMC Product Specification