HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics
(T
A
=25°C, unless otherwise noted)
Symbol
•
Static
BV
DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
g
FS
•
Dynamic
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=10V, I
D
=1A, V
GS
=4.5V
R
GEN
=6Ω
V
DS
=10V, V
GS
=0V, f=1MHz
V
DS
=10V, I
D
=6A, V
GS
=4.5V
-
-
-
-
-
-
-
-
-
-
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward Transconductance
V
GS
=0V, I
D
=250uA
V
GS
=2.5V, I
D
=5.5A
V
GS
=4.5V, I
D
=6.5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=16V, V
GS
=0V
V
GS
=±4.5V, V
DS
=0V
V
DS
=10V, I
D
=6.5A
20
-
-
0.6
-
-
-
Characteristic
Test Conditions
Min.
Spec. No. : MOS200611
Issued Date : 2006.06.01
Revised Date : 2006.06.28
Page No. : 2/4
Typ.
Max.
Unit
-
-
-
-
-
-
30
-
30
20
1.6
1
±200
-
V
mΩ
V
uA
nA
S
9
2.4
3.6
476
65.1
49
50
100
500
200
-
-
-
-
-
-
-
-
ns
-
-
pF
nC
•
Drain-Source Diode Characteristics
I
S
V
SD
Maximum Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
=0V, I
S
=1.5A
-
-
-
0.61
1.7
1.2
A
V
Note: Pulse Test: Pulse Width
≤300us,
Duty Cycle≤2%
Switching
Test Circuit
V
DD
t
d(on)
t
on
t
r
Switching
Waveforms
t
d(off)
t
off
t
f
90%
90%
R
D
V
IN
V
GEN
R
G
G
S
Input, V
IN
10%
Pulse Width
50%
50%
90%
D
V
OUT
Output, V
OUT
10%
10%
Inverted
H08N02CTS
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
