HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200801
Issued Date : 2008.07.22
Revised Date : 2009.0514
Page No. : 1/6
H07N65 Series
N-Channel Power Field Effect Transistor
H07N65 Series Pin Assignment
Tab
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed
to withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
1
2
3
3-Lead Plastic
TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic
TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
1
2
3
D
G
S
Features
H07N65 Series
Symbol:
•
Robust High Voltage Termination
•
Avalanc he Energy Specified
•
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
•
Diode is Characterized for Use in Bridge Circuits
•
IDSS and V
DS(on)
Specified at Elevated Temperature
Absolute Maximum Ratings
Symbol
V
DS
Drain-Source Voltage
Parameter
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (T
C
=25
o
C)
H07N65E (TO-220AB)
H07N65F (TO-220FP)
Derate above 25
O
C
H07N65E (TO-220AB)
H07N65F (TO-220FP)
Operating Temperature Range
Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25
O
C
(V
DD
=50V, V
GS
=10V, I
L
=7A, L=10mH, R
G
=25Ω)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
Value
650
Units
V
I
D
I
DM
V
GS
7
28
±30
120
48
1.18
0.38
-55 to 150
-55 to 150
530
260
A
A
V
W
W
W/°C
W/
o
C
O
O
P
D
T
j
T
stg
E
AS
T
L
C
C
mJ
°C
Note: 1. V
DD
=50V, I
D
=7A
2. Pulse Width and frequency is limited by T
j(max)
and thermal response
H07N65E, H07N65F
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
