HI-SINCERITY
MICROELECTRONICS CORP.
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance Junction to Case Max.
Thermal Resistance Junction to Ambient Max.
TO-220AB
TO-220FP
62.5
Value
Spec. No. : MOS200603
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 2/5
Units
1.3
4
°C/W
°C/W
ELectrical Characteristics
(Tj=25°C, unless otherwise specified)
Symbol
V
(BR)DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
Characteristic
Drain-Source Breakdown Voltage (V
GS
=0V, I
D
=250uA)
Drain-Source Leakage Current (V
DS
=600V, V
GS
=0V)
Drain-Source Leakage Current (V
DS
=480V, V
GS
=0V, T
j
=125°C)
Gate-Source Leakage Current-Forward (V
gsf
=30V, V
DS
=0V)
Gate-Source Leakage Current-Reverse (V
gsr
=-30V, V
DS
=0V)
Gate Threshold Voltage (V
DS
=V
GS
, I
D
=250uA)
Static Drain-Source On-Resistance (V
GS
=10V, I
D
=2.5A)*
Forward Transconductance (V
DS
=15V, I
D
=2.5A)*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
(V
DS
=480V, I
D
=5A, V
GS
=10V)*
(V
DD
=300V, I
D
=5A, R
G
=9.1Ω,
V
GS
=10V)*
V
GS
=0V, V
DS
=25V, f=1MHz
Min.
600
-
-
-
-
2
-
1.5
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
600
150
15
30
15
40
15
10
6
4
4.5
7.5
Max.
-
1
50
100
-100
4
2.3
-
-
-
-
-
-
-
-
-
-
-
-
-
nH
nH
nC
ns
pF
Unit
V
uA
uA
nA
nA
V
Ω
mhos
*: Pulse Test: Pulse Width
≤300us,
Duty Cycle≤2%
Source-Drain Diode
Symbol
V
SD
t
on
t
rr
Forward On Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
Characteristic
I
S
=5A, V
GS
=0V, T
J
=25
o
C
I
S
=5A, V
GS
=0V, d
IS
/d
t
=100A/us
Min.
-
-
-
Typ.
-
**
302
Max.
1.6
-
-
Units
V
ns
ns
**: Negligible, Dominated by circuit inductance
H05N60E, H05N60F
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
