HI-SINCERITY
MICROELECTRONICS CORP.
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance Junction to Case Max.
Thermal Resistance Junction to Ambient Max.
Value
TO-220AB
TO-220FP
62.5
Spec. No. : MOS200910
Issued Date : 2009.04.07
Revised Date :
Page No. : 2/6
Units
2.87
5.5
°C/W
°C/W
ELectrical Characteristics
(Tj=25°C, unless otherwise specified)
Symbol
V
(BR)DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Characteristic
Drain-Source Breakdown Voltage (V
GS
=0V, I
D
=250uA)
Drain-Source Leakage Current (V
DS
=650V, V
GS
=0V)
Drain-Source Leakage Current (V
DS
=480V, V
GS
=0V, T
j
=125°C)
Gate-Source Leakage Current-Forward (V
gsf
=30V, V
DS
=0V)
Gate-Source Leakage Current-Reverse (V
gsr
=-30V, V
DS
=0V)
Gate Threshold Voltage (V
DS
=V
GS
, I
D
=250uA)
Static Drain-Source On-Resistance (V
GS
=10V, I
D
=1A)*
Forward Transconductance (V
DS
≥50V,
I
D
=1A)*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(V
DS
=300V, I
D
=2A, V
GS
=10V)*
(V
DD
=300V, I
D
=2A, R
G
=25Ω,
V
GS
=10V)*
V
GS
=0V, V
DS
=25V, f=1MHz
Min.
650
-
-
-
-
2
-
1
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
300
30
3
13
12
73
15
9.3
2
3.3
Max.
-
5
50
100
-100
4
4.6
-
-
-
-
-
-
-
-
13
-
-
nC
ns
pF
Unit
V
uA
uA
nA
nA
V
Ω
mhos
*: Pulse Test: Pulse Width
≤300us,
Duty Cycle≤2%
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Forward On Voltage(1)
Reverse Recovery Time
Reverse Recovery Charge
Characteristic
I
S
=2A, V
GS
=0V, T
J
=25
o
C
I
S
=2A, V
GS
=0V, d
IS
/d
t
=100A/us
Min.
-
-
-
Typ.
-
235
1.0
Max.
1.4
-
-
Units
V
ns
nC
**: Negligible, Dominated by circuit inductance
H02N60E, H02N60F
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
