HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2001.09.13
Page No. : 1/3
HSB857 / 2SB857
PNP EPITAXIAL PLANAR TRANSISTOR
Description
Low frequency power amplifier.
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 40 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -70 V
BVCEO Collector to Emitter Voltage................................................................................... -50 V
BVEBO Emitter to Base Voltage.......................................................................................... -5 V
IC Collector Current.............................................................................................................. -4 A
IC Collector Current (IC Peak).............................................................................................. -8 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
-70
-50
-5
-
-
-
35
60
-
Typ.
-
-
-
-
-
-
-
-
15
Max.
-
-
-
-1
-1
-1
-
320
-
Unit
V
V
V
uA
V
V
Test Conditions
IC=-10uA, IE=0
IC=-50mA, IB=0
IE=-10uA, IC=0
VCB=-50V, IC=0
IC=-2A, IB=-0.2A
IC=-1A, VCE=-4V
IC=-0.1A, VCE=-4V
IC=-1A, VCE=-4V
VCE=-4V, IC=-500mA, f=100MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
Classification Of hFE2
Rank
hFE
B
60-120
C
100-200
D
160-320
HSB857
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
