ATF-541M4 Absolute Maximum Ratings
[1]
Symbol
V
DS
V
GS
V
GD
I
DS
I
GS
P
diss
P
in max.
T
CH
T
STG
θ
jc
Parameter
Drain-Source Voltage
[2]
Gate-Source Voltage
[2]
Gate Drain Voltage
[2]
Drain Current
[2]
Gate Current
[5]
Total Power Dissipation
[3]
RF Input Power
[5]
Channel Temperature
Storage Temperature
Thermal Resistance
[4]
Units
V
V
V
mA
mA
mW
dBm
°C
°C
°C/W
Absolute
Maximum
5
-5 to 1
-5 to 1
120
2
360
13
150
-65 to 150
212
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate
4.7 mW/°C for T
L
> 74°C.
4. Thermal resistance measured using
150°C Liquid Crystal Measurement method.
5. The device can handle +13 dBm RF Input
Power provided I
GS
is limited to 2 mA. I
GS
at
P
1dB
drive level is bias circuit dependent. See
applications section for additional information.
120
100
80
I
DS
(mA)
0.7V
0.6V
60
0.5V
40
20
0
0.4V
0.3V
0
1
2
3
4
V
DS
(V)
5
6
7
Figure 1. Typical I-V Curves.
(V
GS
= 0.1 V per step)
Product Consistency Distribution Charts
[6, 7]
320
320
Cpk = 0.85
Stdev = 1.14
Cpk = 1.16
Stdev = 0.30
240
300
250
200
Cpk = 1.72
Stdev = 0.072
240
-3 Std
160
160
-3 Std
+3 Std
150
100
+3 Std
80
80
50
0
0
29
32
35
OIP3 (dBm)
38
41
15
16
17
18
GAIN (dB)
19
20
0
0.3
0.5
0.7
NF (dB)
0.9
1.1
Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA.
LSL = 33.0, Nominal = 35.82
Figure 3. Gain @ 2 GHz, 3 V, 60 mA.
LSL = 15.5, Nominal = 17.5, USL = 18.5
Figure 4. NF @ 2 GHz, 3 V, 60 mA.
Nominal = 0.5, USL = 0.9
Notes:
6. Distribution data sample size is 500 samples taken from 6 different wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on
production test equipment. Circuit losses have been de-embedded from actual measurements.
2
HP [ AGILENT(HEWLETT-PACKARD) ]
