5
ATF-34143 Typical Performance Curves,
continued
25
85
°C
25
°C
-40
°C
1.5
GAIN (dB), OP1dB, and OIP3 (dBm)
33
31
P1dB, OIP3 (dBm)
35
30
25
20
15
10
5
0
5.0
4.5
NOISE FIGURE (dB)
Gain
OP1dB
OIP3
NF
29
27
25
23
21
19
P
1dB
OIP3
85
°C
25
°C
-40
°C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
20
G
a
(dB)
1.0
NF (dB)
15
0.5
10
0
2000
4000
6000
FREQUENCY (GHz)
0
8000
17
0
2000
4000
6000
8000
FREQUENCY (MHz)
0
20
40
60
80
100 120 140
I
DSQ
(mA)
Figure 14. Fmin and G
a
vs. Frequency
and Temperature at V
DS
= 4 V, I
DS
= 60 mA.
Figure 15. P
1dB
, IP3 vs. Frequency and
Temperature at V
DS
= 4 V, I
DS
= 60 mA.
[1]
Figure 16. NF, Gain, OP1dB and OIP3
vs. I
DS
at 4 V and 3.9 GHz Tuned for
Noise Figure.
[1]
25
20
15
10
5
GAIN (dB), OP1dB, and OIP3 (dBm)
30
27
24
21
18
15
12
9
6
3
0
0
20
40
60
I
DSQ
(mA)
80
100
Gain
OP1dB
OIP3
NF
5.0
4.5
NOISE FIGURE (dB)
25
20
15
10
5
0
-5
0
50
I
DS
(mA)
100
150
3V
4V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
120
P
1dB
(dBm)
P
1dB
(dBm)
0
-5
0
50
I
DS
(mA)
100
3V
4V
150
Figure 17. NF, Gain, OP1dB and OIP3
vs. I
DS
at 4 V and 5.8 GHz Tuned for
Noise Figure.
[1]
Figure 18. P
1dB
vs. I
DS
Active Bias
Tuned for NF @ 4V, 60 mA at 2 GHz.
Figure 19. P
1dB
vs. I
DS
Active Bias
Tuned for min NF @ 4V, 60 mA at
900 MHz.
Note:
1. P
1dB
measurements are performed with passive biasing. Quicescent drain current, I
DSQ
, is set with zero RF drive applied. As P
1dB
is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
DSQ
the device
is running closer to class B as power output approaches P
1dB
. This results in higher PAE (power added efficiency) when compared to
a device that is driven by a constant current source as is typically done with active biasing. As an example, at a V
DS
= 4 V and
I
DSQ
= 10 mA, I
d
increases to 62 mA as a P
1dB
of +19 dBm is approached.
HP [ AGILENT(HEWLETT-PACKARD) ]
