AMMC-6345 DC Specifications/Physical Properties
[1]
Symbol
I
d
Parameters and Test Conditions
Drain Supply Current
(under any RF power drive and temperature)
(V
d
=5.0 V, V
g
set for I
d
Typical)
Gate Supply Operating Voltage
(I
d(Q)
= 900 (mA))
Thermal Resistance
[2]
(Backside temperature, T
b
= 25°C))
Units
mA
Min.
Typ.
480
Max.
600
V
g
θ
ch-b
V
°C/W
-0.75
-0.55
8.2
-0.4
Notes:
1. Ambient operational temperature T
A
=25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (θ
ch-b
) = 9.0°C/W at T
channel
(T
c
) = 70°C as measured using infrared microscopy. Thermal Resistance at
backside temperature (T
b
) = 25°C calculated from measured data.
AMMC-6345 RF Specifications
[3, 4, 5]
( T
A
= 25°C, V
d
=5V, I
d(Q)=
480 mA, Z
o
=50
Ω
)
Symbol
Gain
P
-1dB
P
-3dB
OIP3
Parameters and Test
Conditions
Small-signal Gain
[4]
Output Power at 1dB
Gain Compression
Output Power at 3dB
Gain Compression
Third Order Intercept
Point;
∆f=100MHz;
Pin=-20dBm
Input Return Loss
[4]
Output Return Loss
[4]
Units
dB
dBm
dBm
dBm
Minimum
18
22.5
Typical
20
24
25
32
Maximum
Sigma
0.28
0.20
0.17
0.8
RLin
RLout
dB
dB
dB
-17
-13
-40
0.92
0.63
1.30
Isolation Min. Reverse Isolation
Notes:
3. Small/Large -signal data measured in wafer form T
A
= 25°C.
4. 100% on-wafer RF test is done at frequency = 25, 30, and 38 GHz. Statistics based on 1500 part sample
5. Specifications are derived from measurements in a 50
Ω
test environment. Aspects of the amplifier performance may be improved over a more
narrow bandwidth by application of additional conjugate, linearity, or power matching.
LSL
LSL
LSL
18
19
20
22.6 22.7 22.8 22.9 23 23.1 23.2 23.3 23.4
23
24
Gain at 30 GHz
P-1dB at 30 GHz
P-1dB at 38 GHz
Typical distribution of Small Signal Gain and Output Power @P-1dB. Based on 1500 part sampled
over several production lots.
2
HP [ AGILENT(HEWLETT-PACKARD) ]
