AMMC-6231 DC Specifications/Physical Properties
[1]
Symbol
I
d
θ
ch-b
Parameters and Test Conditions
Drain Supply Current (under any RF power drive and temperature) (V
d
=3.0 V)
Thermal Resistance
[2]
(Backside temperature, Tb = 25°C)
Units Min. Typ.
mA
°C/W
60
25
Max.
80
Notes:
1. Ambient operational temperature T
A
=25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (q
ch-b
) = 26°C/W at T
channel
(T
c
) = 34°C as measured using infrared microscopy. Thermal Resistance at
backside temperature (T
b
) = 25°C calculated from measured data.
AMMC-6231 RF Specifications
[3, 4, 5]
T
A
= 25°C, V
d
=3.0 V, I
d(Q)=
60 mA, Z
in
=Z
o
=50
Ω
Symbol
Gain
NF
P
-1dB
OIP3
RLin
RLout
Parameters and Test Conditions
Small-signal Gain
[6]
Noise Figure into 50
Ω
Output Power at 1dB Gain Compression
Third Order Intercept Point;
∆f=100MHz;
Pin=-35dBm
Input Return Loss
[6]
Output Return Loss
[6]
Units Minimum
dB
dB
dBm
dBm
dB
dB
20
Typical
22
18-28 GHz = 2.5
28-32 GHz = 2.7
+8.5
+19
-9
-16
Maximum
18-28 GHz = 2.8
28-32 GHz = 2.9
Sigma
0.4
0.1
-8
-12
0.3
0.5
3. Small/Large -signal data measured in wafer form T
A
= 25°C.
4. 100% on-wafer RF test is done at frequency =18, 26, and 31 GHz.
5. Specifications are derived from measurements in a 50
Ω
test environment. Aspects of the amplifier performance may be improved over a more
narrow bandwidth by application of additional conjugate, linearity, or low noise (Gopt) matching.
6. As derived from measured s-parameters
USL
LSL
USL
2.5
2.6
2.7
2.8
2.9
21
21.2 21.4 21.6 21.8
22
22.2 22.4
-10
-9
-8
Noise Figure at 31 GHz
Noise Figure at 26 GHz
S11 at 31GHz
Typical distribution of Small Signal Gain, Noise Figure, and Return Loss. Based on 1500 part sampled over several
production lots.
2
HP [ AGILENT(HEWLETT-PACKARD) ]
