5
Electrical/Optical Characteristics at TA = 25°C
AlGaAs Red
Device
Series
Parameter
Symbol Min.
Typ. Max.
Units
Test Conditions
Luminous Intensity/Segment[1,2,5]
(Digit Average)
IV
8.5
15.0
mcd
IF = 20 mA
1.8
V
IF = 20 mA
Forward Voltage/Segment or DP
VF
2.0
645
637
15
3.0
V
nm
IF = 100 mA
HDSP-
E15x
Peak Wavelength
λPEAK
λd
Dominant Wavelength[3]
Reverse Voltage/Segment or DP[4]
nm
VR
3.0
V
IR = 100 µA
Temperature Coefficient of
VF/Segment or DP
∆VF/°C
-2
mV/°C
Thermal Resistance LED Junction-
RθJ-PIN
340
°C/W/Seg
to-Pin
High Efficiency Red
Device
Series
Parameter
Symbol Min.
Typ. Max.
Units
Test Conditions
5082-761x Luminous Intensity/Segment[1,2,6]
340
800
µcd
IF = 5 mA
(Digit Average)
5082-765x
IV
340
1115
µcd
V
IF = 5 mA
Forward Voltage/Segment or DP
Peak Wavelength
VF
λPEAK
λd
2.1
635
626
30
2.5
IF = 20 mA
nm
nm
V
Dominant Wavelength[3]
All
Reverse Voltage/Segment or DP[4]
VR
3.0
IR = 100 µA
Temperature Coefficient of
VF/Segment or DP
∆VF/°C
-2
mV/°C
Thermal Resistance LED
Junction-to-Pin
RθJ-PIN
280
°C/W
HP [ HEWLETT-PACKARD ]
