POWER MOSFET
▼
Simple Drive Requirement
▼
Small Package Outline
▼
Surface Mount Device
S
D
MAR2310
60V
90mΩ
3A
BV
DSS
R
DS(ON)
I
D
SOT-23
G
Description
MARKING:2310
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial
applications.
D
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 4.5V
Continuous Drain Current
3
, V
GS
@ 4.5V
Pulsed Drain Current
1,2
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
60
±20
3
2.3
10
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Value
Max.
90
Unit
℃/W
2
Tel: +86-755-82973805
Fax: +86-755-82973550
E-mail: sales@hoperf.com http://www.hoperf.com
HOPERF [ Hope Microelectronics co., Ltd ]
