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HI-3000CRIF 参数 Datasheet PDF下载

HI-3000CRIF图片预览
型号: HI-3000CRIF
PDF下载: 下载PDF文件 查看货源
内容描述: [DATACOM, INTERFACE CIRCUIT, CDIP8, ROHS COMPLIANT, CERAMIC, DIP-8]
分类和应用: 电信电信集成电路
文件页数/大小: 13 页 / 78 K
品牌: HOLTIC [ HOLT INTEGRATED CIRCUITS ]
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HI-3000, HI-3001, HI-3002
ABSOLUTE MAXIMUM RATINGS
(Voltages referenced to GND = 0V)
Supply Voltage, VDD, VIO : .....................................................................7V
Current at Input pins ......................................................-100mA to +100mA
DC Voltages at TXD, RXD and STB ..............................-0.5V to V
DD
+0.5V
DC Voltages at CANH, CANL and SPLIT: ...............................-58V to +58V
Internal Power Dissipation: ..............................................................900mW
Electrostatic Discharge (ESD)
1
, All pins ..........................................+/- 6kV
Operating Temperature Range: (Industrial).........................-40°C to +85°C
(Hi-Temp) ........................-55°C to +125°C
Maximum Junction Temperature ......................................................175°C
Storage Temperature Range:
Soldering Temperature:
-65°C to +150°C
(Ceramic)......................60 sec. at +300°C
(Plastic - leads).............10 sec. at +280°C
(Plastic - body) .....................+260°C Max.
2
NOTES:
1. Human Body Model (HBM).
2. Junction Temperature T
J
is defined as T
J
= T
AMB
+ P × R
th
, where T
AMB
is the ambient or operating temperature, P is the power dissipation and R
th
is
a fixed thermal resistance value which depends on the package and circuit board mounting conditions.
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only. Functional
operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
V
DD
= 5V
±
5%, Operating temperature range (unless otherwise noted). Positive currents flow into the IC.
LIMITS
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY CURRENT
V
DD
Supply Current
VIO Supply Current
I
DD
I
IO
Recessive: V
TXD
= V
DD
Dominant: V
TXD
= 0 V
Standby Mode: V
TXD
= V
DD
6
50
15
10
70
30
100
mA
mA
μA
μA
DIGITAL INPUTS (Pins TXD, STB)
HIGH-level input voltage (see Note 1)
LOW-level input voltage
HIGH-level input current
LOW-level input current
V
IH
V
IL
I
IH
I
IL
V
TXD
= V
DD
or VIO
V
TXD
= 0 V
80%V
DD
− 0.5
−5
0
− 50
V
DD
+ 0.5
20%V
DD
+5
− 150
V
V
μA
μA
DIGITAL OUTPUTS
HIGH-level output voltage (RXD Pin) (see Note 1)
LOW-level output voltage (RXD Pin)
Output voltage (SPLIT Pin)
Standby leakage current (SPLIT Pin)
V
OH
V
OL
V
SPLIT
I
STB
I
OH
= 1mA
I
OL
= 1mA
− 100 μA < I
SPLIT
< 100 μA
90%V
DD
0
0.45V
DD
-5
0.1
0.5V
DD
10%V
DD
0.55V
DD
+5
V
V
V
μA
DRIVER
CANH dominant output voltage
CANL dominant output voltage
Recessive output voltage
Bus output voltage in standby
Dominant differential output voltage
Recessive differential output voltage
Matching of dominant output voltage,
V
DD
− V
O(CANH)
− V
O(CANL)
Steady state common mode output voltage
V
O(CANH)
V
O(CANL)
V
CANH(r)
,
V
CANL(r)
V
STB
V
DIFF(d)(o)
V
DIFF(r)(o)
V
OM
V
OC(ss)
V
TXD
= 0 V
V
TXD
= 0 V (See Fig. 2)
V
TXD
= V
DD
, R
L
= 0 (See Fig. 2)
V
TXD
= V
DD
, R
L
= 0 (See Fig. 2)
V
TXD
= 0 V, 45 Ω < R
L
< 65 Ω
V
TXD
= V
DD
, no load (See Fig. 2)
(See Fig. 4)
V
STB
= 0V, R
L
= 60 Ω (See Fig. 5)
3
0.5
2
-0.1
1.5
− 50
− 100
2
1.8
0
-40
0.5V
DD
3.6
1.4
0.5V
DD
4.25
1.75
3
0.1
3
50
150
3
V
V
V
V
V
mV
mV
V
NOTE:
1. When VIO is connected (HI-3001 or HI-3002), limits are referenced wrt VIO rather than V
DD
.
HOLT INTEGRATED CIRCUITS
5