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FFB20UP30DNTM

20A,300V,Ultrafast 双二极管
二极管
0 ONSEMI

GJM0335C1E7R6CB01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
1 MURATA

GRM21BR72D223KW03#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

GQM0335G2D6R0CB01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
1 MURATA

GCM21BR91H683KA37#

汽车[动力总成 / 安全设备],汽车[信息娱乐 / 舒适设备],植入式以外的医疗器械设备 [GHTF A/B/C]
医疗医疗器械
0 MURATA

GRM188D70J226ME01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

GJM0225C1C9R8BB01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

FQPF8N60C

功率 MOSFET,N 沟道,QFET®,600 V,7.5 A,1.2 Ω,TO-220F
局域网PC开关脉冲晶体管
0 ONSEMI

BSC061N08NS5

OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.
暂无信息
0 INFINEON

FQI7N80TU

800V N沟道QFET®
开关脉冲晶体管
0 ONSEMI

FSDM1265RBWDTU

用于 90W 离线反激转换器的 650V 集成电源开关
局域网开关电源开关转换器
0 ONSEMI

IDK08G120C5

The  CoolSiC™ Schottky diodes generation 5 1200 V, 8 A is now available in a D2PAK real 2-pin package. Connecting SiC diodes in parallel and in a small device package, a high efficient system can be achieved while minimizing board space requirement. The elimination of the middle pin reduces a risk of partial discharge at high voltage and high frequency operation.
暂无信息
0 INFINEON

PBSS4630PA

30 V, 6 A NPN low V_CEsat (BISS) transistorProduction
开关光电二极管晶体管
0 NEXPERIA

GQM0335G2D2R7CB01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

GRT0335C1H151FA02#

汽车[信息娱乐 / 舒适设备],工业设备,植入式以外的医疗器械设备 [GHTF A/B/C]
医疗医疗器械
1 MURATA